| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device excellent in electrical characteristics and reliability, and whose damage can be recovered even when the etched part of an Si containing low permittivity film is exposed to an NH<SB>3</SB>based gas until the removal of the etching mask, after etching the Si containing low permittivity film as the etched film with an F containing gas. SOLUTION: The etching mask having a predetermined circuit pattern is formed on the Si containing low permittivity film formed on the semiconductor substrate, and the Si containing low permittivity film is etched through the etching mask with the F containing gas to form grooves or holes. After the etching, the etching mask is removed by ashing using NH<SB>3</SB>gas, a product formed thereupon is removed, and then the damage to the Si containing low permittivity film caused by the processes until the etching mask removing process is recovered by supplying a predetermined recovery gas. COPYRIGHT: (C)2008,JPO&INPIT
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