| 摘要 |
PROBLEM TO BE SOLVED: To provide an IGBT with saturation voltage Vce which is smaller than a conventional case between collector/emitters at the time of high-temperature operation, while a rasing time tf is smaller than a conventional case, and further the generation of punch-through is prevented. SOLUTION: The IGBT includes: a first semiconductor region of a first conductive type; a second semiconductor region of a second conductive type formed on one main face of the first semiconductor region; a third semiconductor region of the first conductive type formed on the surface of the second semiconductor region; a fourth semiconductor region of the first conductive type formed with a predetermined distance on the other main face of the first semiconductor region; a fifth semiconductor region of the second conductive type formed on the surface of the fourth semiconductor region; a gate electrode formed through an insulating film on the second semiconductor region; and a collector electrode formed on the other main face side of the first semiconductor. The first semiconductor region, the fourth semiconductor region, and the fifth semiconductor region are exposed on the other main face of the semiconductor substrate, and each jointed with the collector electrode. COPYRIGHT: (C)2008,JPO&INPIT
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