| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for preventing a short circuit between adjacent polysilicon pads of a semiconductor device. SOLUTION: The semiconductor device manufacturing method comprises a step (a) of forming gates 21 on a substrate 1 each having side walls 12, 13, 14 with their buttons contacted with the substrate 1 surface through a first insulation film 13, a step (b) of forming an epitaxial film 31 between the gates 21 on diffused regions 41 in the substrate 1, a step (c) of forming second insulation films 32, 33 on adjacent element isolating regions between the diffused regions 41, and a step (d) of forming contact plugs 11 on the epitaxial film 31 on the diffused regions 41. The step (c) may comprise (c1) a step of forming the second insulation films 32, 33 each being thicker than the first insulation film 13. COPYRIGHT: (C)2008,JPO&INPIT
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