发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device having flexibility by separating an element that is manufactured by a comparatively low-temperature (temperature of less than 500° C.) process from a substrate is provided. The element is separated from a glass substrate by the following steps: forming a silicone layer over a glass substrate; performing plasma treatment to the surface of the silicone layer to weaken the surface of the silicone layer; stacking an organic compound layer over the silicone layer; and forming an element that is manufactured through a process at a comparatively low-temperature, typically, a temperature that the organic compound can withstand, over the compound layer.
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申请公布号 |
US2009061721(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
US20080197482 |
申请日期 |
2008.08.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ISA TOSHIYUKI |
分类号 |
H01J9/24;H01L21/30;H01L51/40 |
主分类号 |
H01J9/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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