| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a nitride-based semiconductor layer which can form the nitride-based semiconductor layer having an end face of a (000-1) plane without using a cleaving step. SOLUTION: The method of forming the nitride-based semiconductor layer comprises a step of forming a plane (000-1) nearly vertical to a plane (1-100) as the main surface of an n-type GaN substrate 1, and a step of forming a semiconductor laser element layer 2 on the plane (1-100) of the n-type GaN substrate 1. COPYRIGHT: (C)2009,JPO&INPIT
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