| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a reading error is caused by an undesired voltage drop in a bit line caused by a leak current from a transistor for a reading port of a memory cell during reading in a semiconductor storage device including the transistor for the reading port. SOLUTION: This semiconductor storage device includes a third transistor having one of a source and a drain connected to a first bit line and switching the supply of a ground voltage performed on the first bit line according to a value held in a memory cell according to the selection and non-selection of the memory cell, and a fixed voltage keeping circuit for keeping the potential of the other of the source and the drain of the third transistor to fixed potential in a memory cell non-selected state, in a six-transistor SRAM. COPYRIGHT: (C)2009,JPO&INPIT
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