| 摘要 |
<p>This invention provides a method for pattern formation which is advantageous in that, in patterning by double exposure using liquid immersion exposure, when a first-layer pattern is inactivated followed by exposure in the formation of a second-layer pattern, the first-layer pattern is not rendered alkali soluble by exposure of the first-layer pattern and, thus, the second-layer pattern can be formed while retaining the first-layer pattern. The method for pattern formation is characterized by comprising the steps of forming a first pattern on a substrate using a composition for first-resist layer formation, inactivating the first pattern, forming a second resist layer using a composition for second resist layer formation on the substrate with the pattern formed thereon and exposing the assembly to light, and developing the assembly to form a second pattern in a space area in the first pattern, the composition for first resist layer formation containing a crosslinking agent for accelerating conversion to a negative working type.</p> |
