| 摘要 |
<p>PURPOSE: A method for fabrication of a thin film transistor and an apparatus thereof are provided to pattern only an ohmic contact layer exposed between a source electrode and a drain electrode using a laser. CONSTITUTION: A semiconductor layer(130) is formed on an insulating layer(120) corresponding to a gate electrode(110). An ohmic contact layer(140) is formed on the semiconductor layer. An electrode material is formed on the ohmic contact layer. A source electrode(160) and a drain electrode(150) are formed on the ohmic contact layer by patterning the electrode material. The ohmic contact layer exposed between the source electrode and the drain electrode is eliminated using a laser(210). A passivation layer is formed on a substrate(100). A contact hole is formed on the passivation layer. A pixel electrode is formed on the passivation layer to be electrically connected to the electrode exposed through the contact hole.</p> |
