Method of operating nonvolatile memory device comprising resistance material

摘要

A method of operating a nonvolatile memory device comprises applying a read current with a first level to a nonvolatile memory cell comprising a variable resistance material, determining read data based on the applied read current, checking a syndrome corresponding to the read data to determine whether the read data is pass or fail, changing the read current from the first level to a second level, which is different from the first level, according to the determination of whether the read data is pass or fail, and performing a read-retry operation comprising applying the read current of the second level to the nonvolatile memory cell.

主权项

1. A method of operating a nonvolatile memory device, comprising:
receiving a first calibration code from a controller and determining a first read current having a first level according to the first calibration code; applying the first read current to a nonvolatile memory cell comprising a variable resistance material, and determining read data based on the applied first read current; checking a syndrome corresponding to the read data to determine whether the read data is pass or fail; changing the first read current to a second read current having a second level different from the first level in response to the determination of whether the read data is pass or fail and in response to a second calibration code from the controller; and performing a read-retry operation comprising applying the second read current to the nonvolatile memory cell.