发明名称 |
Transparent quantum dot light-emitting diodes with dielectric/metal/dielectric electrode |
摘要 |
Quantum dot light emitting diodes (QD-LEDs) are formed that are transparent and emit light from the top and bottom faces. At least one electrode of the QD-LEDs is a dielectric/metal/dielectric layered structure, where the first dielectric comprises metal oxide nanoparticles or polymer-nanoparticle blends and is 10 to 40 nm in thickness, the metal layer is 5 to 25 nm in thickness, and the second dielectric layer is a nanoparticulate, polymer-nanoparticle blend or continuous layer of 30 to 200 nm in thickness and is situated distal to the light emitting layer of the QD-LED. |
申请公布号 |
US9419174(B2) |
申请公布日期 |
2016.08.16 |
申请号 |
US201314424540 |
申请日期 |
2013.09.26 |
申请人 |
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. |
发明人 |
Zheng Ying;Cao Weiran;Xue Jiangeng;Holloway Paul H. |
分类号 |
H01L29/06;H01L33/06;H01L51/50;C09K11/56;C09K11/88;H05B33/14;H05B33/22;H05B33/26;H01L33/00;H01L33/08;H01L33/26;H01L33/28;H01L33/30;H01L33/40;H01L51/00 |
主分类号 |
H01L29/06 |
代理机构 |
Saliwanchik, Lloyd & Eisenschenk |
代理人 |
Saliwanchik, Lloyd & Eisenschenk |
主权项 |
1. A quantum dot light emitting diode (QD-LED) comprising:
a light emitting layer comprising a plurality of quantum dots (QDs); and at least one dielectric/metal/dielectric (DMD) electrode comprising a first dielectric layer proximal to the light emitting layer, a metal layer and a second dielectric layer distal to the light emitting layer, wherein the first dielectric layer and the second dielectric layer comprise nanoparticles or polymer-nanoparticle blends, wherein the DMD electrode is a transparent cathode. |
地址 |
Gainesville FL US |