Diodes and methods of manufacturing diodes

摘要

Diodes and methods of manufacturing diodes are disclosed. In some examples, the diodes may include a cathode assembly. The cathode assembly may include a cathode electrode and a N+ substrate layer on the cathode electrode. The cathode assembly may additionally include a N buffer layer on the N+ substrate layer, and a N− bulk layer on the N buffer layer. The N buffer layer may be disposed between the N+ substrate layer and the N− bulk layer. Additionally, the N buffer layer may include at least one damaged sublayer having crystal damage configured to provide recombination centers for charge carriers and at least one undamaged sublayer that excludes crystal damage. The diodes may additionally include an anode assembly adjacent to the N− bulk layer.

主权项

1. A diode, comprising:
a cathode assembly including:
a cathode electrode,a N+ substrate layer on the cathode electrode,a N buffer layer on the N+ substrate layer, anda N− bulk layer on the N buffer layer, wherein the N buffer layer is disposed between the N+ substrate layer and the N− bulk layer, and the N buffer layer includes at least one damaged sublayer having crystal damage configured to provide recombination centers for charge carriers and at least one undamaged sublayer; and an anode assembly adjacent to the N− bulk layer.