Termination for SiC trench devices

摘要

A silicon carbide device has a termination region that includes a mesa region that links the termination region to an active area of the device and that includes one or more trenches.

主权项

1. A semiconductor device comprising:
a silicon carbide body having first and second opposing major surfaces; an active area formed along said first major surface of said silicon carbide body; a termination region formed along said first major surface of said silicon carbide body and defining said active area, said termination region including a termination trench formed within said silicon carbide body and having sidewalls and a bottom surface; a guard ring formed within said silicon carbide body along said sidewalls and said bottom surface of said termination trench; and a field insulation body covering said sidewalls and said bottom surface of said termination trench, wherein a portion of said field insulation body is in contact with said bottom of said termination trench.