Plasma curing of PECVD HMDSO film for OLED applications

摘要

Methods for forming an OLED device are described. An encapsulation layer having a buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is deposited on the first barrier layer and is cured with a fluorine-containing plasma at a temperature less than 100 degrees Celsius. The second barrier layer is then deposited on the buffer layer.

主权项

1. A method for forming an organic light emitting diode (OLED) device, comprising:
depositing a first barrier layer on a region of a substrate having an OLED structure disposed thereon; depositing a buffer layer on the first barrier layer; curing the buffer layer with a fluorine-containing plasma at a temperature less than about 100 degrees Celsius; and depositing a second barrier layer on the cured buffer layer.