摘要 |
A copolymer comprises the polymerized product of a dissolution-rate controlling monomer having the formula (I), an acyclic vinyl ether monomer of the formula (II), and a cyclic vinyl ether monomer of the formula (III):;
wherein Ra, Rb, Rc, L, X, and Z1 are defined herein. A photoresist composition comprising the copolymer is described, as is an article coated with the photoresist composition, and a method of forming an electronic device using the photoresist composition. |
主权项 |
1. A copolymer, comprising the polymerized product of:
a dissolution-rate controlling monomer having the formula (I), an acyclic vinyl ether of the formula (II), and a cyclic vinyl ether of the formula (III): wherein Ra is H, F, C1-10 alkyl, or C1-10 fluoroalkyl, provided Ra is C1-10 fluoroalkyl for at least one instance of the monomer of formula (I), X is O or NR wherein R is H, a C1-10 alkyl, or a C6-10 aryl, Z1 is a C1-20 alkyl, C3-20 cycloalkyl, C6-20 aryl, or C7-20 aralkyl, each optionally substituted with hydroxyl, sulfonate, sulfonic acid, sulfonamide, sulfonimide, carboxylic acid, ester, carbonate, amide, or a combination thereof, each Rb is independently H or a group selected from C1-20 alkyl, C3-20 cycloalkyl, C6-20 aryl, or C7-20 aralkyl wherein each group is optionally substituted with —F, or a combination thereof, wherein two or more of the foregoing groups are optionally linked with —C(═O)—O—, Rc is a group selected from C1-20 alkyl, C3-20 cycloalkyl, C6-20 aryl, or C7-20 aralkyl wherein each Rc group is optionally substituted with —F or —OH, or a combination thereof, wherein two or more of the foregoing groups are optionally linked with —O—, —S—, —NR—, or —C(═O)—O—, and L is a linear C1-20 alkylene, C1-20 alkylene-C(═O)*, C3-20 cycloalkylene, C6-20 arylene, or C7-20 aralkylene each optionally substituted with —F, —OH, or a combination thereof, wherein * indicates a point of attachment of the C1-20 alkylene-C(═O) to a double bond of the cyclic vinyl ether of the formula (III), and wherein an amount of the acyclic vinyl ether of the formula (II) is from greater than 0 mol % to 20 mol % based on the total monomer amount. |