发明名称 Reference voltage generator circuit for an integrated circuit device
摘要 The present invention relates to a reference voltage generator circuit for a semiconductor device that enables generating a reference voltage considering various parameters such as temperature variation. There is provided a reference voltage generator circuit coupled between a power supply voltage and a ground voltage for generating a reference voltage responsive to a plurality of current path control signals. A control circuit generates the plurality of the current path control signals. The control circuit includes a voltage division circuit coupled between the power supply voltage and the ground voltage for generating a divided voltage responsive to a plurality of externally applied code signals. A comparison circuit compares the divided voltage and the reference voltage and generates a comparison signal as a result of the comparison. An output circuit receives the comparison signal from the comparison circuit responsive to the plurality of the code signals and generates the plurality of the current path control signals.
申请公布号 US6166589(A) 申请公布日期 2000.12.26
申请号 US19990389678 申请日期 1999.09.02
申请人 SAMSUNG ELECTRONICS, CO., LTD. 发明人 PARK, JONG-MIN
分类号 G05F3/24;(IPC1-7):G05F1/10 主分类号 G05F3/24
代理机构 代理人
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