发明名称 |
Method of forming ultra-shallow junctions in a semiconductor wafer with deposited silicon layer to reduce silicon consumption during salicidation |
摘要 |
A method for forming ultra shallow junctions in a semiconductor wafer with reduced silicon consumption during salicidation supplies additional silicon during the salicidation process. After the gate and source/drain junctions are formed in a semiconductor device, high resistivity metal silicide regions are formed on the gate and source/drain junctions. Silicon is then deposited in a layer on the high resistivity metal silicide regions. An annealing step is then performed to form low resistivity metal silicide regions on the gate and source/drain junctions. The deposited silicon is a source of silicon that is employed as a diffusion species during the transformation of the high resistivity metal silicide (such as CoSi) to a low resistivity metal silicide (such as CoSi2). Since the additional silicon provided in the deposited layer is consumed, there is reduced consumption of the silicon from the ultra-shallow junctions, thereby preventing the bottom of the silicide regions from reaching the bottom of the source/drain junctions.
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申请公布号 |
US6165903(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19980185516 |
申请日期 |
1998.11.04 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BESSER, PAUL R.;KEPLER, NICK;WIECZOREK, KARSTEN |
分类号 |
H01L21/285;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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地址 |
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