发明名称 |
Element isolation method for semiconductor devices including etching implanted region under said spacer to form a stepped trench structure |
摘要 |
An element isolation method, in particular, a shallow trench isolation (STI) method for semiconductor devices is disclosed in which a trench is formed to have a stepped structure shaped in such a fashion that it has a smaller width at its lower portion than at its upper portion. This stepped trench structure, which includes at least one step, is capable of obtaining an increased metal contact margin, thereby preventing metal contacts from being short-circuited with wells due to a misalignment thereof.
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申请公布号 |
US6165870(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19990342501 |
申请日期 |
1999.06.29 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
SHIM, HYUN WOONG;KOO, BON SEONG |
分类号 |
H01L21/762;(IPC1-7):H01L21/76;H01L21/302;H01L21/38;H01L21/461 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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