发明名称 APPARATUS FOR PROCESSING SUBSTRATE AND METHOD OF DOING THE SAME
摘要 <p>An apparatus for processing a substrate is provided to perform a half-exposure process, a melting process, a reflow process and a transformation process by including a substrate carrier, a chemical supply unit and a gas supply unit. A substrate is transferred by a substrate carrier(12). A chemical supply unit(3) supplies chemical to the substrate. A gas supply unit(4) supplies a gas atmosphere to the substrate. A temperature control unit for controlling the temperature of the substrate is further included. A control unit(24) controls the substrate carrier, the chemical supply unit and the gas supply unit so that the chemical is supplied to the substrate by the chemical supply unit before the gas atmosphere is supplied to the substrate by the gas supply unit.</p>
申请公布号 KR20050028888(A) 申请公布日期 2005.03.23
申请号 KR20040074895 申请日期 2004.09.18
申请人 NEC LCD TECHNOLOGIES, LTD. 发明人 KIDO, SHUSAKU
分类号 H01L21/3065;C23F1/00;H01L21/02;H01L21/027;H01L21/304;H01L21/306;H01L21/677;H01L21/68;(IPC1-7):H01L21/027 主分类号 H01L21/3065
代理机构 代理人
主权项
地址