| 摘要 |
A phase-change memory device according to the present invention includes a phase-change layer, a stacked heater electrode electrically connected to the phase-change layer, and a contact plug electrically connected to the stacked heater electrode. The stacked heater electrode includes at least a first electrode portion made of a first electrically conductive material and a second electrode portion provided in contact with the inner side of the first electrode portion. The second electrode portion is made of a second electrically conductive material having a resistivity lower than the resistivity of the first electrically conductive material.
|
