| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and plasma treatment method for giving a uniform processing characteristics on a substrate plane, by offsetting the effect of the reaction products on the treatment characteristics in the plasma treatment of etching treatment, or the like. SOLUTION: In the method of plasma treatment for treating the substrate to be treated using a gas plasma via a mask in a treatment chamber, the amount of adhesion of a side protective film is adequately adjusted, and the adequately adjusted amount of adhesion is set equal in between the center and the circumference of the substrate, and plasma to be processed, while keeping uniformity within the plane of the side protective film. COPYRIGHT: (C)2008,JPO&INPIT
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