| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element that maintains a vertical channel structure and has horizontal channels and drains, and to provide a manufacturing method of the semiconductor element. SOLUTION: The semiconductor element includes: a high-concentration first-conductivity-type semiconductor substrate; a low-concentration first-conductivity-type epitaxial layer formed on the semiconductor substrate; a plurality of second-conductivity-type base regions formed separately at a prescribed region of the epitaxial layer; a high-concentration first-conductivity-type source region formed in the base region; a high-concentration first-conductivity-type drain region formed between the base regions; a trench formed through the source and base regions; a first gate conductive layer formed in the trench; and a second gate conductive layer formed on the base region exposed on the substrate. COPYRIGHT: (C)2008,JPO&INPIT
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