| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor laser element of which variation and degradation of element characteristics are prevented, being excellent in productivity. SOLUTION: The manufacturing method of a semiconductor laser element includes a film forming process in which a first clad layer 6, active layer 8, second clad layer 10, etching stopper layer 12, third clad layer 14, and cap layer 18 are sequentially formed on a semiconductor substrate 2, a cap layer etching process in which the cap layer is etched using a photoresist mask 30 to form the cap layer in stripe, a ridge part forming process in which the third clad layer is etched with the cap layer as a mask to form a ridge part 22 in stripe, a block layer forming process to form a current block layer 24 as to cover the entire surface, and a ridge part exposing process in which the current block layer is removed by etching so that the upper surface of the ridge part is exposed. COPYRIGHT: (C)2008,JPO&INPIT
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