发明名称 TUNNEL MAGNETORESISTIVE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a tunnel magnetoresistive element having a low magnetic relaxation constant in a minute size. SOLUTION: A magnetoresistive element containing a laminated structure comprising a ferromagnetic fixed layer, a barrier layer, a ferromagnetic free layer and a non-magnetic layer brought into contact with another interface of the ferromagnetic free layer is used as the tunnel magnetoresistive element, and the non-magnetic layer consists of MgO. The ferromagnetic free layer comprises a non-magnetic conductive layer 12 and ferromagnetic layers 11 and 13 as two layers, coupled antiparallel magnetically via the non-magnetic conductive layer 12. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008210905(A) 申请公布日期 2008.09.11
申请号 JP20070044811 申请日期 2007.02.26
申请人 TOHOKU UNIV 发明人 ANDO YASUO;WATANABE DAISUKE;OKANE MIKIHIKO;MIYAZAKI TERUNOBU
分类号 H01L43/08;G11B5/39;H01L21/8246;H01L27/105;H01L43/10 主分类号 H01L43/08
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