| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to prevent mixing of colors, establish high sensitivity and refine pixel size. SOLUTION: The solid-state imaging device 1 has an image area wherein a plurality of light receiving pixels are provided in a first conductive semiconductor substrate 11. It is provided with: a plurality of photosensors 21 wherein light receiving areas 23 and photoelectric conversion areas 22 forming the light receiving pixels are formed in the semiconductor substrate 11; a first well area 13 that is formed opposite to the light receiving area 23 with the photoelectric conversion area 22 of the photosensor 21 in between and is a second conductive type reverse to the first conductive type; a second conductive second well area 14 that is formed opposite to the photoelectric conversion area 22 with the first well area 13 in between and in areas other than an area corresponding to the photosensor 21; and a first conductive area 15 that is formed opposite to the photoelectric conversion area 22 with the first well area 13 in between and in an area corresponding to the photosensor 21. COPYRIGHT: (C)2008,JPO&INPIT
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