发明名称 |
Electrically Erasable Programmable Read-Only Memory (EEPROM) Cell and Methods for Forming and Reading the Same |
摘要 |
In a method of reading data in an EEPROM cell, a bit line voltage for reading is applied to the EEPROM cell including a memory transistor and a selection transistor. A first voltage is applied to a sense line of the memory transistor. A second voltage greater than the first voltage is applied to a word line of the selection transistor. A current passing through the EEPROM cell is compared with a predetermined reference current to read the data stored in the EEPROM cell. An on-cell current of the EEPROM cell may be increased in an erased state and the data in the cell may be readily discriminated.
|
申请公布号 |
US2009059664(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
US20080192839 |
申请日期 |
2008.08.15 |
申请人 |
LEE YONG-KYU;HAN JEONG-UK;JEON HEE-SEOG;MOON JUNG-HO;HA SOUNG-YOUB |
发明人 |
LEE YONG-KYU;HAN JEONG-UK;JEON HEE-SEOG;MOON JUNG-HO;HA SOUNG-YOUB |
分类号 |
G11C16/04;G11C7/00;G11C16/06;H01L21/336 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|