Methods of protecting a dielectric mask layer and related semiconductor devices

摘要

Devices and methods for forming semiconductor devices with a protection layer for a dielectric mask layer are provided. One method includes, for instance; obtaining a substrate having at least one of a dielectric layer and a metal layer; forming a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and forming a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer. One intermediate semiconductor device includes, for instance: a substrate having at least one of a dielectric layer and a metal layer; a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer.

主权项

1. A method of forming a semiconductor device, said method comprising:
obtaining a substrate having at least one of a dielectric layer and a metal layer; forming a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; forming a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer of a thickness of about 1 nm to about 6 nm; forming a photoresist layer on a top surface of the SiNx cap layer; utilizing the photoresist layer to form at least an opening in the SiNx cap layer and the first SiCN dielectric mask layer; and removing the photoresist layer and at least a portion of the SiNx cap layer via an oxygen plasma ashing process.