| 发明名称 | Metal hardmask all in one integrated etch | ||
| 摘要 | A method for forming conductive contacts in a dielectric layer is provided. Partial vias are etched into the dielectric layer through a via mask. Trenches are etched into the dielectric layer through a trench mask, wherein the etching the trenches completes and over etches the vias to widen bottoms of the vias. Tops of the trenches or vias are rounded. | ||
| 申请公布号 | US9349606(B2) | 申请公布日期 | 2016.05.24 |
| 申请号 | US201214398101 | 申请日期 | 2012.05.02 |
| 申请人 | Lam Research Corporation | 发明人 | Cheng Yu;Huang Junwen;Pei Huiyuan;Liu Jiangang;Choi Youngjin;Wang Liang |
| 分类号 | H01L21/311;H01L21/768 | 主分类号 | H01L21/311 |
| 代理机构 | Beyer Law Group LLP | 代理人 | Beyer Law Group LLP |
| 主权项 | 1. A method for forming conductive contacts in a dielectric layer, comprising: etching partial vias into the dielectric layer through a via mask; etching trenches into the dielectric layer through a trench mask, wherein the etching the trenches completes and over etches the vias to widen bottoms of the vias; and rounding tops of the trenches or vias. | ||
| 地址 | Fremont CA US | ||