Methods of manufacturing semiconductor devices

摘要

Methods of manufacturing semiconductor devices are disclosed. In one embodiment, a material layer is formed over a workpiece. The workpiece includes a first portion, a second portion, and a hard mask disposed between the first portion and the second portion. The material layer is patterned, and first spacers are formed on sidewalls of the patterned material layer. The patterned material layer is removed, and the second portion of the workpiece is patterned using the first spacers as an etch mask. The first spacers are removed, and second spacers are formed on sidewalls of the patterned second portion of the workpiece. The patterned second portion of the workpiece is removed, and the hard mask of the workpiece is patterned using the second spacers as an etch mask. The first portion of the workpiece is patterned using the hard mask as an etch mask.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a material layer over a workpiece, the workpiece including a first portion, a second portion, and a hard mask disposed between the first portion and the second portion, the hard mask comprising a metal; patterning the material layer; forming first spacers on sidewalls of the patterned material layer using a [C(n)H(2n+2)+N2] plasma at a temperature of less than about 60° C.; removing the patterned material layer; patterning the second portion of the workpiece using the first spacers as an etch mask; removing the first spacers; forming second spacers on sidewalls of the patterned second portion of the workpiece; removing the patterned second portion of the workpiece; patterning the hard mask of the workpiece using the second spacers as an etch mask; and patterning the first portion of the workpiece using the hard mask as an etch mask, wherein the forming the first spacers, the patterning the second portion of the workpiece using the first spacers as an etch mask, the forming the second spacers, and the patterning the hard mask of the workpiece using the second spacers as an etch mask are performed in-situ in an etching chamber.