E-fuse structure of semiconductor device

摘要

Provided is an e-fuse structure of a semiconductor device. the e-fuse structure may include a fuse link formed of a first metal material to connect a cathode with an anode, a capping dielectric covering a top surface of the fuse link, and a dummy metal plug penetrating the capping dielectric and being in contact with a portion of the fuse link. The dummy metal plug may include a metal layer and a barrier metal layer interposed between the metal layer and the fuse link. The barrier metal layer may be formed of a second metal material different from the first metal material.

主权项

1. An e-fuse structure of a semiconductor device, comprising:
a fuse link of a first metal material to connect a cathode and an anode; a capping dielectric covering a top surface of the fuse link; and a dummy metal plug penetrating the capping dielectric and contacting the fuse link, the dummy metal plug including a barrier metal layer between a metal layer and the fuse link, wherein the barrier metal layer includes a second metal material different from the first metal material, wherein the fuse link has a width that is substantially equal to or smaller than widths of the anode and the cathode.