发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device, which allow mixed loading of dissimilar devices and achieve high yield.SOLUTION: A semiconductor device manufacturing method comprises: an adhesive layer formation process (S1) of forming an adhesive layer on a first semiconductor wafer having an electrode on a surface having the electrode; an electrode exposure process (S2) of removing at least a part of the adhesive layer on the electrode of the first semiconductor wafer to expose at least a part of the electrode of the semiconductor wafer; a dicing process (S3) of dicing the first semiconductor wafer to obtain first semiconductor chips; a thermocompression bonding process (S4) of thermocompression bonding the electrodes of the first semiconductor chips, which are at least partially exposed with electrodes of a second semiconductor wafer having the electrodes to obtain a laminate; and a reflow process (S5) of reflowing the laminate.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016111112(A) |
申请公布日期 |
2016.06.20 |
申请号 |
JP20140245508 |
申请日期 |
2014.12.04 |
申请人 |
HITACHI CHEMICAL CO LTD |
发明人 |
MITSUKURA KAZUYUKI;ZEISHO RYOTA;MINEGISHI TOMONORI |
分类号 |
H01L21/60;H01L21/301;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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