Semiconductor structures including fluidic microchannels for cooling and related methods

摘要

Semiconductor structures are fabricated that include a semiconductor material bonded to a substrate with a layer of dielectric material between the semiconductor material and the substrate. At least one fluidic microchannel extends in a lateral direction through the layer of dielectric material between the semiconductor material and the substrate. The at least one fluidic microchannel includes at least one laterally extending section having a transverse cross-sectional shape entirely surrounded by the layer of dielectric material.

主权项

1. A semiconductor structure, comprising:
a substrate; a first layer of dielectric oxide material disposed over the substrate; a first layer of semiconductor material disposed over the first layer of dielectric oxide material, the first layer of dielectric oxide material disposed between the first layer of semiconductor material and the substrate, the first layer of semiconductor material having at least one laterally extending recess in a surface of the first layer of semiconductor material on a side thereof opposite the first layer of dielectric oxide material; at least one fluidic microchannel extending in a lateral direction through the first layer of dielectric oxide material between the first layer of semiconductor material and the substrate, the at least one fluidic microchannel including at least one laterally extending section having a transverse cross-sectional shape entirely surrounded by the first layer of dielectric oxide material; a second layer of semiconductor material bonded over the first layer of semiconductor material; another dielectric material disposed between the first layer of semiconductor material and the second layer of semiconductor material and lining the at least one laterally extending recess in the first layer of semiconductor material; and at least one additional fluidic microchannel extending through the at least one laterally extending recess in the first layer of semiconductor material within the another dielectric material.