发明名称 |
Method for producing semiconductor device and semiconductor device |
摘要 |
A SGT production method includes a step of forming first and second fin-shaped silicon layers, forming a first insulating film, and forming first and second pillar-shaped silicon layers; a step of forming diffusion layers by implanting an impurity into upper portions of the first and second pillar-shaped silicon layers, upper portions of the first and second fin-shaped silicon layers, and lower portions of the first and second pillar-shaped silicon layers; a step of forming a gate insulating film and first and second polysilicon gate electrodes; a step of forming a silicide in upper portions of the diffusion layers formed in the upper portions of the first and second fin-shaped silicon layers; and a step of depositing an interlayer insulating film, exposing and etching the first and second polysilicon gate electrodes, then depositing a metal, and forming first and second metal gate electrodes. |
申请公布号 |
US9390978(B2) |
申请公布日期 |
2016.07.12 |
申请号 |
US201514823138 |
申请日期 |
2015.08.11 |
申请人 |
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. |
发明人 |
Masuoka Fujio;Nakamura Hiroki |
分类号 |
H01L21/02;H01L21/3213;H01L21/8234;H01L29/78;H01L29/66;H01L29/45;H01L29/49;H01L29/06 |
主分类号 |
H01L21/02 |
代理机构 |
Brinks Gilson & Lione |
代理人 |
Brinks Gilson & Lione |
主权项 |
1. A method for producing a semiconductor device, the method comprising:
forming a first fin-shaped silicon layer and a second fin-shaped silicon layer on a substrate, forming a first insulating film around the first fin-shaped silicon layer and the second fin-shaped silicon layer, and forming a first pillar-shaped silicon layer in an upper portion of the first fin-shaped silicon layer, and forming a second pillar-shaped silicon layer in an upper portion of the second fin-shaped silicon layer, the first pillar-shaped silicon layer having a width equal to a width of the first fin-shaped silicon layer and the second pillar-shaped silicon layer having a width equal to a width of the second fin-shaped silicon layer. |
地址 |
Peninsula Plaza SG |