Low temperature thin wafer backside vacuum process with backgrinding tape

摘要

Vacuum processing, such as a backside metallization (BSM) deposition, is performed on a taped wafer after a gas escape path is formed between a base film of the tape and the wafer frontside surface following backgrind. Venting provided by the gas escape path reduces formation of bubbles under the tape. The gas escape path may be provided, for example, by a selective pre-curing of tape adhesive, to breach an edge seal and place the wafer frontside surface internal to the edge seal in fluid communication with an environment external to the edge seal. With the thinned wafer supported by the pre-cured tape, BSM is then deposited while the wafer and tape are cooled, for example, via a cooled electrostatic chuck.

主权项

1. A backside vacuum processing method, comprising:
laminating a tape to a frontside of the wafer wherein the tape includes a base film and an adhesive; backgrinding a backside of the wafer, the backside opposite the frontside; forming a gas escape path on the wafer wherein forming the gas escape path breaches an edge seal formed by the adhesive to place the wafer frontside internal to the edge seal in fluid communication with an environment external to the edge seal, wherein the forming the gas escape path occurs after laminating the tape to the wafer and after backgrinding the backside of the wafer; vacuum processing the wafer with the tape disposed on a chuck of a vacuum processing apparatus; and removing the tape.