发明名称 MANUFACTURING METHOD OF SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST AND SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST
摘要 Provided are a manufacturing method of catalyst-free substrate grown graphene, and the catalyst-free substrate grown graphene. The manufacturing method of catalyst-free substrate grown graphene of the present invention comprises the following steps: (a) arranging a metal layer on a substrate; (b) providing etching gas and carbon-containing gas, and conducting plasma enhanced chemical vapor deposition (PECVD); (c) supplying the etching gas for the catalyst-free layer when supplying the carbon-containing gas, and growing graphene on the catalyst-free layer; and (d) continuously conducting PECVD from the process of step c, and growing graphene on the substrate without the catalyst-free layer by continuously removing all of the catalyst-free layer by the etching gas.
申请公布号 KR20160093921(A) 申请公布日期 2016.08.09
申请号 KR20150014851 申请日期 2015.01.30
申请人 LEE, YOUN TEK 发明人 LEE, YOUN TEK
分类号 C01B31/04 主分类号 C01B31/04
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