发明名称 |
SIDEWALL SPACER PATTERNING METHOD USING GAS CLUSTER ION BEAM |
摘要 |
A method for patterning a substrate is described. The method includes receiving a substrate having a patterned layer, wherein the patterned layer defines a first mandrel pattern, and wherein a first material layer of a first composition is conformally deposited over the first mandrel pattern. The method further includes partially removing the first material layer using a first gas cluster ion beam (GCIB) etching process to expose a top surface of the first mandrel pattern, open a portion of the first material layer at a bottom region adjacent a feature of the first mandrel pattern, and retain a remaining portion of the first material layer on sidewalls of the first mandrel pattern; and selectively removing the first mandrel pattern using one or more etching processes to leave a second mandrel pattern comprising the remaining portion of the first material layer that remained on the sidewalls of the first mandrel pattern. |
申请公布号 |
US2016222521(A1) |
申请公布日期 |
2016.08.04 |
申请号 |
US201514661411 |
申请日期 |
2015.03.18 |
申请人 |
TEL Epion Inc. |
发明人 |
Chae Soo Doo;Chang Youngdon;Song Il-seok;Russell Noel |
分类号 |
C23F1/00 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for patterning a substrate, comprising:
receiving a substrate having a patterned layer, the patterned layer defining a first mandrel pattern, wherein a first material layer of a first composition is conformally deposited over the first mandrel pattern; partially removing the first material layer using a first gas cluster ion beam (GCIB) etching process to expose a top surface of the first mandrel pattern, open a portion of the first material layer at a bottom region adjacent a feature of the first mandrel pattern, and retain a remaining portion of the first material layer on sidewalls of the first mandrel pattern; and selectively removing the first mandrel pattern using one or more etching processes to leave a second mandrel pattern comprising the remaining portion of the first material layer that remained on the sidewalls of the first mandrel pattern. |
地址 |
Billerica MA US |