Multi-function resistance change memory cells and apparatuses including the same

摘要

Various embodiments comprise apparatuses including drive circuitry to provide signal pulses of a selected time duration and/or amplitude to a number of memory cells. The memory cells may include an array of resistance change memory cells to be electrically coupled to the drive circuitry. The resistance change memory cells may be programmed for a range of retention time periods and operating speeds based on the received signal pulse. Additional apparatuses and methods are described.

主权项

1. An apparatus comprising a plurality of resistance change memory (RCM) cells, the apparatus comprising:
a first region of the RCM cells; a second region of the RCM cells; and drive circuitry to selectively provide one of a plurality of signal pulse types to the first region of the RCM cells and to selectively provide a different one of the plurality of signal pulse types to the second region of the RCM cells, each of the plurality of signal pulse types having a different attribute and corresponding to a different memory function type, at least one of the plurality of signal pulse types being configurable in both amplitude and time duration to vary a data retention time of at least one of the RCM cells by controlling at least one of a height parameter and a radial growth parameter of a localized conduction region of the at least one RCM cell.