| 摘要 |
PROBLEM TO BE SOLVED: To suppress the erosion of a second region formed by silicon nitride and shorten a processing time in a technique for etching a first region formed by silicon oxide.SOLUTION: In an etching method for according to an embodiment, more than one sequence for etching a first region is executed. Each sequence includes: the first step for forming a fluorocarbon-containing deposit on an object to be processed; and the second step for etching the first region by radicals of fluorocarbon included in the deposit. After execution of the more than one sequence, plasma of a second process gas containing fluorocarbon gas is produced, whereby the first region is further etched.SELECTED DRAWING: Figure 1 |
