发明名称 High frequency integrated circuit and device using same
摘要 Provided is an amplifier with a test oscillator for a high frequency characteristic monitor, which has small power loss in a normal operation state and secures good noise performance while it is possible to equip both a transmitter IC and a receiver IC with the amplifier. In a high frequency IC including an amplifier including an inductive load and a test oscillator arranged in a same chip, the test oscillator commonly uses the inductive load of the amplifier, the amplifier has a bias voltage terminal to switch an operation state into an active state/inactive state, and the oscillator has a bias voltage terminal to switch an operation state into an active state/inactive state. In a test operation mode, the amplifier is inactivated and the test oscillator is activated and in a normal operation mode, the amplifier is activated and the test oscillator is inactivated.
申请公布号 US9444402(B2) 申请公布日期 2016.09.13
申请号 US201514846601 申请日期 2015.09.04
申请人 Hitachi, Ltd. 发明人 Wachi Yusuke;Somada Ichiro;Okazaki Takao
分类号 H03B5/24 主分类号 H03B5/24
代理机构 Miles & Stockbridge PC 代理人 Miles & Stockbridge PC
主权项 1. A high frequency IC, at least comprising: an inductive load; an amplifier; an oscillator; and a second inductor and a third inductor, wherein the amplifier and the oscillator commonly use the inductive load, wherein the amplifier has a first bias voltage terminal to switch an operation state of the amplifier into an active state/inactive state, and wherein the oscillator has a second bias voltage terminal to switch an operation state of the oscillator into an active state/inactive state, and wherein an emitter terminal of the first transistor and an emitter terminal of the second transistor of the amplifier are connected through the second inductor and the third inductor and are rounded in an alternating-current manner.
地址 Tokyo JP