发明名称 |
Process of forming an electronic device including a layer of discontinuous storage elements |
摘要 |
An electronic device can include a layer of discontinuous storage elements. A dielectric layer overlying the discontinuous storage elements can be substantially hydrogen-free. A process of forming the electronic device can include forming a layer including silicon over the discontinuous storage elements. In one embodiment, the process includes oxidizing at least substantially all of the layer. In another embodiment, the process includes forming the layer using a substantially hydrogen-free silicon precursor material and oxidizing at least substantially all of the layer.
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申请公布号 |
US7932189(B2) |
申请公布日期 |
2011.04.26 |
申请号 |
US20070627817 |
申请日期 |
2007.01.26 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MERCHANT TUSHAR P.;LIU CHUN-LI;MURALIDHAR RAMACHANDRAN;ORLOWSKI MARIUS K.;RAO RAJESH A.;STOKER MATTHEW |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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