| 摘要 |
PURPOSE: A method for manufacturing a T-type gate is provided to improve a frequency characteristic by making the surface of the T-type gate clean and plane without using a conventional electron beam writing method. CONSTITUTION: The first material is formed on a substrate(11) so that a gate pattern region is exposed. The second material is formed on the surface and side of the first material so that an intermediate portion of the gate pattern region is exposed. The first gate electrode material(17) is formed on the substrate of the exposed intermediate portion, and the second material is eliminated. The third material is formed between the first gate electrode material and the first material to expose the surface of the first gate electrode material. The second gate electrode material(22,23) electrically connected to the first gate electrode material is formed on the first gate electrode material and third material.
|
