发明名称 Ion extraction apparatus for single side wafers
摘要 An apparatus for extracting inorganic ionic contaminants from a front surface of a silicon wafer for chemical analysis. The apparatus includes a container adapted to receive the wafer and inhibit air circulation over the front surface of the wafer. The container has a support for holding the wafer in a generally level orientation with the front surface of the wafer facing upwardly, an inlet orifice for introducing a layer of extraction fluid to the front surface of the wafer, and a sampling device for taking a sample from the layer of extraction fluid on the front surface of the wafer. The layer of extraction fluid is deposited upon only the front surface of the wafer and held for a period of time so that contaminants on the front surface are extracted into the layer of fluid. The container inhibits air circulation over the front surface of the wafer to preclude introducing contaminants to the extraction fluid that cause a false measurement of contaminants on the wafer. A portion of the layer of fluid is collected by a sampling device for subsequent analysis.
申请公布号 US6164299(A) 申请公布日期 2000.12.26
申请号 US20000525984 申请日期 2000.03.15
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 SUN, PENG;ADAMS, MARTY
分类号 G01N1/10;G01N1/02;G01N1/34;(IPC1-7):B08B13/00 主分类号 G01N1/10
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