发明名称 Method to recover the exposure sensitivity of chemically amplified resins from post coat delay effect
摘要 Methods of fabricating a photomask, methods of treating a chemically amplified resist-coated photomask blank, a photomask blank resulting from the methods, and systems for fabricating a photomask are provided. The method is useful for recovering the exposure sensitivity of a chemically amplified resist disposed on a photomask blank from a post-coat delay effect.
申请公布号 US2004185349(A1) 申请公布日期 2004.09.23
申请号 US20030391708 申请日期 2003.03.19
申请人 MICRON TECHNOLOGY, INC. 发明人 YANG BAORUI
分类号 G03F1/14;G03F7/039;G03F7/16;(IPC1-7):G03F9/00;G03C5/00 主分类号 G03F1/14
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