SEMICONDUCTOR DEVICE, UV LIGHT EMITTING ELEMENT USING SEMICONDUCTOR STRUCTURE THEREIN, AND THEIR MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To simply and easily obtain a large-area AlGaN layer holding high quality with little dislocation and no crack, and a UV light emitting element using the AlGaN layer.

SOLUTION: The semiconductor structure containing an AlGaN layer comprises one or more distortion relaxing amorphous or metal layers 12 formed on an Si substrate 11, a single crystal layer dissimilar from AlGaN, e.g., an Si (111) semiconductor layer 13 covering a part of the relaxing layers 12 to form irregularities, and an AlGaN (Al composition x: 0≤x≤1) layer 14 covering the irregularities formed by forming the single crystal layer dissimilar from AlGaN.

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