发明名称 |
Method of manufacturing an electronic arrangement |
摘要 |
The device of the invention comprises a thin film transistor of an organic semiconductor material. This semiconductor material is patterned by applying first a protective layer and thereafter a photoresist. As a result hereof, the transistor of the invention (A) shows a very low leakage current and a low threshold voltage in comparison with prior art transistors (B,C).
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申请公布号 |
US2006220126(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20040547591 |
申请日期 |
2004.02.26 |
申请人 |
HUISMAN BART-HENDRIK;GEUNS THOMAS CLEOPHAS T |
发明人 |
HUISMAN BART-HENDRIK;GEUNS THOMAS CLEOPHAS T. |
分类号 |
H01L27/12;H01L51/00;H01L51/05;H01L51/30;H01L51/40 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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