METHODS FOR DEPOSITING SILICON OXIDE

摘要

The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes. Conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls. The disclosed embodiments achieve more uniform film quality as evidenced by more uniform wet etch rates and electrical properties throughout the film. The disclosed embodiments may use one or more of a relatively high deposition temperature, a relatively high RF power for generating the plasma, and/or relatively long RF plasma exposure duration during each cycle of the PEALD reaction.

主权项

1. A method of depositing a silicon oxide film on a surface of a substrate in a single or multi-station reaction chamber, the method comprising:
(a) flowing a silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the surface of the substrate; (b) after (a), flowing an oxygen-containing reactant in vapor phase into the reaction chamber, and exposing the surface of the substrate to plasma to drive a surface reaction between the silicon-containing reactant and the oxygen-containing reactant to form the silicon oxide film,
wherein flowing the oxygen-containing reactant and exposing the surface of the substrate to plasma occur at least partially at the same time,wherein a temperature of the substrate is maintained between about 435-550° C. during (a) and (b),wherein the plasma is generated using a total RF power between about 2.1-3.6 Watts per square centimeter of substrate area, andwherein the surface of the substrate is exposed to the plasma in (b) for a duration between about 2-5 seconds; and (c) repeating (a) and (b) until the silicon oxide film reaches a target thickness.