| 发明名称 | Directional pre-clean in silicide and contact formation | ||
| 摘要 | A method includes etching a dielectric layer to form an opening, with an underlying region underlying the dielectric layer exposed to the opening, and performing a bombardment to bombard a surface region of the underlying region through the opening. After the bombardment, the surface region is reacted with a process gas to form a reaction layer. An anneal is then performed to remove the reaction layer. | ||
| 申请公布号 | US9368357(B2) | 申请公布日期 | 2016.06.14 |
| 申请号 | US201514982592 | 申请日期 | 2015.12.29 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chang Chih-Wei;Hsu Hung-Chang;Huang Chun-Hsien;Lin Yu-Hung;Chu Li-Wei;Lin Sheng-Hsuan;Lin Wei-Jung;Wang Yu-Shiuan |
| 分类号 | H01L21/00;H01L21/44;H01L21/285;H01L21/306;H01L21/265;H01L21/324;H01L21/225;H01L29/66;H01L21/768 | 主分类号 | H01L21/00 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A method comprising: etching a dielectric layer at a surface of a wafer to form an opening, with an underlying region underlying the dielectric layer exposed to the opening; performing a bombardment to simultaneously bombard a first surface region of the dielectric layer and a second surface region of the underlying region through the opening; and after the bombardment, reacting the first surface region and the second surface region with a process gas to form reaction layers, wherein during the reacting, the wafer is heated. | ||
| 地址 | Hsin-Chu TW | ||