发明名称 Method of manufacturing an electrode for an energy storage device
摘要 Zn layer 21 or Zn alloy layer, Ni layer 22, and Sn layer 23 or Sn alloy layer are formed on a connecting terminal part 10a of a positive electrode composed of Al by plating. Accordingly, this can solder Cu negative electrode, which is composed of metal that is different species from Al, through Sn layer 23 or Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. Further, since the contacting area is increased in comparison with the conventional jointing by the spot-welding or the conventional fastening by a bolt so that the resistance value at the contacting point is reduced, the voltage drop of the energy storage device by contact resistance can be reduced.
申请公布号 US9368249(B2) 申请公布日期 2016.06.14
申请号 US201113806104 申请日期 2011.06.14
申请人 Senju Metal Industry Co., Ltd. 发明人 Nakamura Katsuji;Tsuruta Kaichi;Ozaki Yuji;Watarai Shigeaki;Takagi Hidenori;Ohori Yutaka
分类号 H01R43/16;H01B1/02;C23C18/16;C23C18/18;C23C18/54;H01G11/24;H01G11/66;H01M2/20;H01M2/30;H01B13/32;C25D5/12;C25D5/44;C23C18/36;C23C18/52 主分类号 H01R43/16
代理机构 Chernoff, Vilhauer, McClung & Stenzel, LLP 代理人 Chernoff, Vilhauer, McClung & Stenzel, LLP
主权项 1. A method of manufacturing an electrode for an energy storage device, comprising: forming a positive electrode by: forming a layer of Zn or a Zn alloy on a positive electrode containing Al by plating; forming a layer of Ni on the layer of Zn or Zn alloy by plating; and forming a layer of Sn or Sn alloy on the Ni layer by plating; providing a negative electrode containing Cu; and connecting the positive electrode to the negative electrode by soldering.
地址 Tokyo JP