Magnetoresistive sensor having synthetic antiferromagnetic layer in top and bottom shields

摘要

In accordance with one implementation of the described technology, an apparatus comprises a sensor structure including a top shield which includes a top shield synthetic antiferromagnetic layer and a bottom shield including a bottom shield synthetic antiferromagnetic layer, wherein the bottom synthetic antiferromagnetic shield layer acts as a seed layer structure.

主权项

1. An apparatus comprising:
a sensor structure, including a top shield including a top shield synthetic antiferromagnetic (SAF) layer and a bottom shield including a bottom shield SAF layer, wherein the bottom SAF shield layer acts as a seed layer that promotes crystal texture growth of an antiferromagnetic layer with a magnetic orientation pinned perpendicular to an air-bearing surface direction.