发明名称 MEMORY DEVICE AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM
摘要 According to one embodiment, a memory device includes a nonvolatile memory, address translation unit, generation unit, and reception unit. The nonvolatile memory includes erase unit areas. Each of the erase unit areas includes write unit areas. The address translation unit generates address translation information relating a logical address of write data written to the nonvolatile memory to a physical address indicative of a write position of the write data in the nonvolatile memory. The generation unit generates valid/invalid information indicating whether data written to the erase unit areas is valid data or invalid data. The reception unit receives deletion information including a logical address indicative of data to be deleted in the erase unit area.
申请公布号 US2016188459(A1) 申请公布日期 2016.06.30
申请号 US201514656506 申请日期 2015.03.12
申请人 Kabushiki Kaisha Toshiba 发明人 Kanno Shinichi
分类号 G06F12/02 主分类号 G06F12/02
代理机构 代理人
主权项 1. A memory device comprising: a nonvolatile memory including a plurality of erase unit areas, each of the erase unit areas including a plurality of write unit areas; an address translation unit which generates address translation information relating a logical address of write data written to the nonvolatile memory to a physical address indicative of a write position of the write data in the nonvolatile memory; a generation unit which generates valid/invalid information indicating whether data written to the plurality of erase unit areas is valid data or invalid data; and a reception unit which receives deletion information including a logical address indicative of data to be deleted in the erase unit area.
地址 Tokyo JP