Junction field effect transistor cell with lateral channel region

摘要

A junction field effect transistor cell of a semiconductor device includes a top gate region, a lateral channel region and a buried gate region arranged along a vertical direction. The lateral channel region includes first zones of a first conductivity type and second zones of a second conductivity type which alternate along a lateral direction perpendicular to the vertical direction. A pinch-off voltage of the junction field effect transistor cell does not depend, or only to a low degree depends, on a vertical extension of the lateral channel region.

主权项

1. A semiconductor device, comprising:
a junction field effect transistor cell comprising a top gate region, a lateral channel region and a buried gate region arranged along a vertical direction, wherein the lateral channel region comprises first zones of a first conductivity type and second zones of a second conductivity type, the first and second zones alternating along a lateral direction perpendicular to the vertical direction, and the top and buried gate regions have the second conductivity type and the second zones directly adjoin the top gate region.